C3896 - NPN Triple Diffused Planar Silicon Transistor

Datasheet Summary

Features

High speed (tf=100ns typ).
High reliability (Adoption of HVP process).
High breakdown voltage (VCBO=1500V).
Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC3896] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc.

Sanyo

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Datasheet Details

Part number	C3896
Manufacturer	Sanyo
File Size	94.72 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	C3896 Datasheet
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Ordering number:EN4097 NPN Triple Diffused Planar Silicon Transistor 2SC3896 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High reliability (Adoption of HVP process). · High breakdown voltage (VCBO=1500V). · Adoption of MBIT process.

Published: Jun 8, 2015 |