B1127 - 2SB1127

Features

Adoption of FBET, MBIT processes.
Low saturation voltage.
Large current capacity.
Fast switching speed. Package Dimensions unit:mm 2009A [2SB1127] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Symbol VCBO VCEO VEBO IC ICP IB PC Junction Temperature Storage Temperature Tj Tstg Electrical Chara.

Sanyo

Datasheet Details

Part number	B1127
Manufacturer	Sanyo
File Size	90.86 KB
Description	2SB1127
Datasheet	B1127 Datasheet
Additional preview pages of the B1127 datasheet.

📁 Similar Datasheet

B110 - Low Voltage X-Ray Tube (Ferranti)
B1100 - 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
B1100 - SCHOTTKY BARRIER RECTIFIERS (CTC)
B1100B - 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
B1100BQ - 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER (Diodes)
B1100CALRP - SIDACtor Protection Thyristors (Littelfuse)
B1100CCLRP - SIDACtor Protection Thyristors (Littelfuse)
B1100LB - 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
B1100Q - 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER (Diodes)
B1100W - Small Signal Schottky Diode (VIKING TECH)

Other Datasheets by Sanyo

B1120 - 2SB1120
B1121 - 2SB1121
B1122 - 2SB1122
B1123 - 2SB1123
B1125 - 2SB1125
B1126 - 2SB1126
B1118 - 2SB1118
B1119 - 2SB1119

Full PDF Text Transcription

Click to expand full text

Ordering number:2452 PNP Epitaxial Planar Silicon Transistor 2SB1127 20V/5A Switching Applications Applications · Strobe, power supplies, relay drivers, lamp drivers. Features · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity. · Fast switching speed.

Published: May 31, 2015 |