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B1122 - 2SB1122

Features

  • Adoption of FBET process.
  • Very small size making it easy to provide high- density hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1122/2SD1622] E : Emitter C : Collector B : Base ( ) : 2SB1122 Specifications SANYO : PCP (Bottom view) Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO.

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Datasheet Details

Part number B1122
Manufacturer Sanyo
File Size 135.80 KB
Description 2SB1122
Datasheet download datasheet B1122 Datasheet
Additional preview pages of the B1122 datasheet.

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Full PDF Text Transcription

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Ordering number:2040A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1122/2SD1622 Low-Frequency Power Amplifier Applications Applications · Voltage regulators relay drivers, lamp drivers, electrical equipment. Features · Adoption of FBET process.. · Very small size making it easy to provide high- density hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1122/2SD1622] E : Emitter C : Collector B : Base ( ) : 2SB1122 Specifications SANYO : PCP (Bottom view) Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Mounted on ceramic board (250mm2×0.
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