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B1118 - 2SB1118

Features

  • Low collector-to-emitter saturation voltage.
  • Very small size making it easy to provide high- density, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1118/2SD1618] ( ) : 2SB1118 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg.

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Datasheet Details

Part number B1118
Manufacturer Sanyo
File Size 114.45 KB
Description 2SB1118
Datasheet download datasheet B1118 Datasheet
Additional preview pages of the B1118 datasheet.

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Full PDF Text Transcription

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Ordering number:1784B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1118/2SD1618 Low-Voltage High-Current Amplifier, Muting Applications Features · Low collector-to-emitter saturation voltage. · Very small size making it easy to provide high- density, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1118/2SD1618] ( ) : 2SB1118 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Mounted on ceramic board (250mm2×0.
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