VEC2822 - P-Channel Silicon MOSFET / Schottky Barrier Diode

SANYO (now Panasonic)

Key Features

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device.

VEC2822 p-channel silicon mosfet / schottky barrier diode by SANYO (now Panasonic) - Datasheet Preview

Datasheet Details

Part number	VEC2822
Manufacturer	SANYO (now Panasonic)
File Size	132.76 KB
Description	P-Channel Silicon MOSFET / Schottky Barrier Diode
Datasheet	VEC2822 Datasheet

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Other Datasheets by SANYO (now Panasonic)

Part Number	Description
VEC2820	N-Channel Silicon MOSFET / Schottky Barrier Diode
VEC2801	P-Channel Silicon MOSFET / Schottky Barrier Diode
VEC2803	General-Purpose Switching Device Applications
VEC2811	P-Channel Silicon MOSFET / Schottky Barrier Diode
VEC2812	N-Channel Silicon MOSFET / Schottky Barrier Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr Ordering number : ENA0961 VEC2822 SANYO Semiconductors DATA SHEET VEC2822 Features • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications DC / DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance • Ultrahigh-speed switching. • 1.8V drive. [SBD] • Low switching noise. • Low leakage current and high reliability due to planar structure.