VEC2811 - P-Channel Silicon MOSFET / Schottky Barrier Diode

SANYO (now Panasonic)

Key Features

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device.

VEC2811 p-channel silicon mosfet / schottky barrier diode by SANYO (now Panasonic) - Datasheet Preview

Datasheet Details

Part number	VEC2811
Manufacturer	SANYO (now Panasonic)
File Size	108.75 KB
Description	P-Channel Silicon MOSFET / Schottky Barrier Diode
Datasheet	VEC2811 Datasheet

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Part Number	Description
VEC2812	N-Channel Silicon MOSFET / Schottky Barrier Diode
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VEC2818	P-Channel Silicon MOSFET / Schottky Barrier Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr Ordering number : ENN8287 VEC2811 VEC2811 Features • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications • • DC/DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • 4V drive. [SBD] • Short reverse recovery time. • Low forward voltage.