VEC2812 - N-Channel Silicon MOSFET / Schottky Barrier Diode

SANYO (now Panasonic)

Key Features

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device.

VEC2812 n-channel silicon mosfet / schottky barrier diode by SANYO (now Panasonic) - Datasheet Preview

Datasheet Details

Part number	VEC2812
Manufacturer	SANYO (now Panasonic)
File Size	108.81 KB
Description	N-Channel Silicon MOSFET / Schottky Barrier Diode
Datasheet	VEC2812 Datasheet

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Part Number	Description
VEC2811	P-Channel Silicon MOSFET / Schottky Barrier Diode
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VEC2814	N-Channel Silicon MOSFET / Schottky Barrier Diode
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VEC2818	P-Channel Silicon MOSFET / Schottky Barrier Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr Ordering number : ENA0392 VEC2812 SANYO Semiconductors DATA SHEET VEC2812 Features • • MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications • • DC / DC converter. Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • 1.8V drive. [SBD] • Short reverse recovery time. • Low forward voltage.