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VEC2616 - N-Channel and P-Channel Silicon MOSFETs

Features

  • N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device.

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Part Number Description
VEC2610 N-Channel and P-Channel Silicon MOSFETs
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Full PDF Text Transcription

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www.DataSheet.co.kr Ordering number : ENA1822 VEC2616 SANYO Semiconductors DATA SHEET VEC2616 Features • • • N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications ON-resistance Nch: RDS(on)1=62mΩ(typ.), Pch: RDS(on)1=105mΩ(typ.) 4V drive N-channel MOSFET + P-channel MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Conditions N-channel 60 ±20 3 12 0.9 1.0 150 --55 to +150 P-channel --60 ±20 --2.
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