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VEC2601 - N-Channel and P-Channel Silicon MOSFETs

Features

  • N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device.

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Part Number Description
VEC2602 N-Channel Silicon MOSFET
VEC2603 N-Channel and P-Channel Silicon MOSFETs
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Full PDF Text Transcription

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www.DataSheet.co.kr Ordering number : ENA0933 VEC2601 SANYO Semiconductors DATA SHEET VEC2601 Features • N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications • • • A composite type of a low on-resistance P-channel MOSFET and a small signal N-channel MOSFET for driving P-channel MOSFET enables high-density mounting. Best suited for load switches. 2.5V drive. 0.75mm mount high. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm)1unit Conditions N-channel 30 ±10 0.15 0.6 0.
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