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VEC2602 - N-Channel Silicon MOSFET

Features

  • General-Purpose Switching Device.

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Full PDF Text Transcription

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www.DataSheet.co.kr Ordering number : ENN8021 VEC2602 N-Channel Silicon MOSFET VEC2602 Features • • General-Purpose Switching Device Applications • • Best suited for inverter applications. The VEC2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, thereby enabling high-density mounting. 4V drive. Mounting height 0.75mm. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions N-channel 30 ±20 4 16 0.9 1.
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