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CPH6622 - N-Channel Silicon MOSFET

Features

  • N-Channel Silicon MOSFET General-Purpose Switching Device.

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Full PDF Text Transcription

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www.DataSheet4U.com Ordering number : ENA0398A CPH6622 SANYO Semiconductors DATA SHEET CPH6622 Features • • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. With a built-in gate resistor. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤12ms, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm)1unit Mounted on a ceramic board (900mm2✕0.8mm) Conditions Ratings 20 ±12 3.0 18 0.9 1.
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