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Ordering number : ENA2166
CPH6635
Power MOSFET
30V, 0.4A, 3.7Ω, –20V, –1.5A, 280mΩ, Complementary Dual CPH6
http://onsemi.com
Features
• Excellent ON-resistance characteristic (P-Channel : RDS(on)1=215mΩ (typ.)) • Optimal for load switch use (N-Channel for drive is embedded) • N-Channel : 1.5V drive, P-Channel : 1.8V drive • Halogen Free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature
VDSS VGSS ID IDP PD Tch
PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.