Datasheet4U Logo Datasheet4U.com

CPH6635 - Power MOSFET

Features

  • Excellent ON-resistance characteristic (P-Channel : RDS(on)1=215mΩ (typ. )).
  • Optimal for load switch use (N-Channel for drive is embedded).
  • N-Channel : 1.5V drive, P-Channel : 1.8V drive.
  • Halogen Free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μ.

📥 Download Datasheet

Datasheet Details

Part number CPH6635
Manufacturer onsemi
File Size 245.96 KB
Description Power MOSFET
Datasheet download datasheet CPH6635 Datasheet

Full PDF Text Transcription

Click to expand full text
Ordering number : ENA2166 CPH6635 Power MOSFET 30V, 0.4A, 3.7Ω, –20V, –1.5A, 280mΩ, Complementary Dual CPH6 http://onsemi.com Features • Excellent ON-resistance characteristic (P-Channel : RDS(on)1=215mΩ (typ.)) • Optimal for load switch use (N-Channel for drive is embedded) • N-Channel : 1.5V drive, P-Channel : 1.8V drive • Halogen Free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling.
Published: |