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CPH6612 - N-Channel Silicon MOSFET

Features

  • General-Purpose Switching Device.

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Full PDF Text Transcription

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www.DataSheet4U.com Ordering number : ENN8106 CPH6612 N-Channel Silicon MOSFET CPH6612 Features • • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Conditions Ratings 20 ±12 2 8 0.
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