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Ordering number : ENN8107
CPH6616
N-Channel Silicon MOSFET
CPH6616
Features
• • • •
General-Purpose Switching Device Applications
Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Excellent ON-resistance characteristic. Best suited for load switches. 4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Conditions Ratings 30 ±20 2.5 10 0.