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CPH5820 - DC / DC Converter Applications

Features

  • Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm (MCH3308) and a Schottky Barrier Diode (SBS006M) 2171 contained in one package facilitating high-density mounting. 2.9 [MOSFET] 5 4.
  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 4V drive. [SBD].
  • Short reverse recovery time. 1 0.95.
  • Low forward voltage. [CPH5820] 3 0.6 0.2 0.05 0.15 2 0.4 0.6 1.6 2.8 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANY.

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Full PDF Text Transcription

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www.DataSheet4U.com Ordering number : ENN7382 CPH5820 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5820 DC / DC Converter Applications Features • Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm (MCH3308) and a Schottky Barrier Diode (SBS006M) 2171 contained in one package facilitating high-density mounting. 2.9 [MOSFET] 5 4 • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. [SBD] • Short reverse recovery time. 1 0.95 • Low forward voltage. [CPH5820] 3 0.6 0.2 0.05 0.15 2 0.4 0.6 1.6 2.8 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 0.2 0.
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