CPH5804 Datasheet PDF - Sanyo Semicon Device P-Channel Silicon MOSFET Specs

CPH5804 - P-Channel Silicon MOSFET

Datasheet Summary

Features

Package Dimensions.
Composite type with a P-Channel Sillicon MOSFET unit : mm (MCH3312) and a Schottky Barrier Diode (SBS006M) 2171 contained in one package facilitating high-density mounting. [MOSFET].
Low ON-resistance. 2.9 54.
Ultrahigh-speed switching.
4V drive. [SBD].
Short reverse recovery time.
Low forward voltage. 1 0.95 0.6 1.6 0.6 2.8 [CPH5804] 3 2 0.4 0.15 0.05 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 0.

Datasheet Details

Part number	CPH5804
Manufacturer	Sanyo Semicon Device
File Size	50.58 KB
Description	P-Channel Silicon MOSFET
Datasheet	CPH5804 Datasheet
Additional preview pages of the CPH5804 datasheet.

📁 Similar Datasheet

CPH5803 - N-Channel Silicon MOSFET (Sanyo)

CPH5871 - Power MOSFET (ON Semiconductor)

CPH5504 - Bipolar Transistor (ON Semiconductor)

CPH5505 - Bipolar Transistor (ON Semiconductor)

CPH5506 - Bipolar Transistor (ON Semiconductor)

CPH5513 - Pin Diode (ON Semiconductor)

CPH5518 - Bipolar Transistor (ON Semiconductor)

CPH5520 - Bipolar Transistor (ON Semiconductor)

CPH5524 - Bipolar Transistor (ON Semiconductor)

CPH5541 - Bipolar Transistor (ON Semiconductor)

Full PDF Text Transcription

Click to expand full text

Ordering number : ENN6980 CPH5804 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 DC / DC Converter Applications Features Package Dimensions • Composite type with a P-Channel Sillicon MOSFET unit : mm (MCH3312) and a Schottky Barrier Diode (SBS006M) 2171 contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. 2.9 54 • Ultrahigh-speed switching. • 4V drive. [SBD] • Short reverse recovery time. • Low forward voltage. 1 0.95 0.6 1.6 0.6 2.8 [CPH5804] 3 2 0.4 0.15 0.05 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 0.2 0.7 0.2 0.9 0.

Published: Mar 23, 2005 |