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Ordering number:EN6427
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode
CPH5801
DC/DC Converter Applications
Features
· The CPH5801 composite device consists of following two devices to facilitate high-density mounting. One is an N-channel MOSFET that features low ON resistance, high-speed switching, and low driving voltage. The other is a shottky barrier diode that features short reverse recovery time and low forward voltage. · Each device incorporated in the CPH5801 is equivalent to the 2SK3119 and to the SBS005, respectively.
Package Dimensions
unit:mm 2171
[CPH5801]
2.9 5 4 3
0.6
1 0.95
2 0.4
0.6
1.6
2.8
0.
CPH5801 Datasheet
