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Ordering number : ENN7913
CPH3326
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P-Channel Silicon MOSFET
CPH3326
Features
• • •
General-Purpose Switching Device Applications
Low ON-resistance. Ultrahigh-speed switching. 4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --100 ±20 --0.