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2SC4299
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4299 900 800 7 3(Pulse6) 1.5 70(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C
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Application : Switching Regulator and General Purpose
(Ta=25°C) 2SC4299 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 50typ V V
16.2
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.2A IC=1A, IB=0.2A VCE=12V, IE=–0.3A VCB=10V, f=1MHz
External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6
Unit
µA
23.0±0.3
V
9.5±0.2
µA
a b
MHz pF
1.75 2.15 1.05 5.45±0.1 1.5 4.4
+0.2 -0.1
3.3
0.
C4299 Datasheet
