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2SC4297
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4297 500 400 10 12(Pulse24) 4 75(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
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Application : Switching Regulator and General Purpose External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=7A IC=7A, IB=1.4A IC=7A, IB=1.4A VCE=12V, IE=–1A VCB=10V, f=1MHz
(Ta=25°C) 2SC4297 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 105typ V V MHz pF Unit
µA
23.0±0.3
V
9.5±0.2
µA
a b
16.2
1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.
C4297 Datasheet
