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SWD1N60 - N-Channel MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • High ruggedness.
  • RDS(ON) (Max 12 Ω)@VGS=10V.
  • Gate Charge (Max 6nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-251 TO-252 TO-126 1. Gate 2. Drain 3. Source General.

📥 Download Datasheet

Datasheet Details

Part number SWD1N60
Manufacturer Samwin
File Size 855.60 KB
Description N-Channel MOSFET
Datasheet download datasheet SWD1N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr SAMWIN SW1N60 N-channel MOSFET BVDSS : 600V ID : 1.0A RDS(ON) : 12ohm 1 1 2 2 3 3 1 2 2 3 1 3 Features ■ High ruggedness ■ RDS(ON) (Max 12 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-251 TO-252 TO-126 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
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