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SWD19N10 - N-Channel MOSFET

Description

This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier.

Features

  • High ruggedness.
  • RDS(ON) (Max 0.1Ω)@VGS=10V.
  • Gate Charge (Typ 100nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-220 TO-252 BVDSS : 100V ID : 17A RDS(ON) : 0.1 ohm 1 1 2 3 2 3 2 1. Gate 2. Drain 3. Source 1 General.

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Datasheet Details

Part number SWD19N10
Manufacturer Samwin
File Size 849.53 KB
Description N-Channel MOSFET
Datasheet download datasheet SWD19N10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr SAMWIN SW19N10 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.1Ω)@VGS=10V ■ Gate Charge (Typ 100nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220 TO-252 BVDSS : 100V ID : 17A RDS(ON) : 0.1 ohm 1 1 2 3 2 3 2 1. Gate 2. Drain 3. Source 1 General Description This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize RDS(ON), low gate charge and high rugged avalanche characteristics.
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