Datasheet4U Logo Datasheet4U.com

SWD100N03 - N-Channel MOSFET

Description

This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier.

Features

  • High ruggedness.
  • RDS(ON) (Max 5.3mΩ)@VGS=10V.
  • Gate Charge (Typ 146nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested 1 TO-220 TO-251 TO-252 TO-263 BVDSS : 30V ID : 100A RDS(ON) : 5.3 mΩ 1 2 3 2 3 1 2 1 3 2 2 3 1 3 1. Gate 2. Drain 3. Source General.

📥 Download Datasheet

Datasheet Details

Part number SWD100N03
Manufacturer Samwin
File Size 601.10 KB
Description N-Channel MOSFET
Datasheet download datasheet SWD100N03 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SWD-109 Single Driver Tyco Electronics
SWD-119 Single Driver Tyco Electronics
SWDC0603 SMD Power Inductors Tai Tech
SWDT-1C PIN SPDT Switches BOWEI
SWDY0806 HIGH CURRENT POWER INDUCTORS Superworld

Other Datasheets by Samwin

Part Number Description
SWD19N10 N-Channel MOSFET
SWD1N60 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet.co.kr SAMWIN SW100N03 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 5.3mΩ)@VGS=10V ■ Gate Charge (Typ 146nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 1 TO-220 TO-251 TO-252 TO-263 BVDSS : 30V ID : 100A RDS(ON) : 5.3 mΩ 1 2 3 2 3 1 2 1 3 2 2 3 1 3 1. Gate 2. Drain 3. Source General Description This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize RDS(ON), low gate charge and high rugged avalanche characteristics.
Published: |