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SW4N80B - N-channel TO-220F MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • High ruggedness.
  • RDS(ON) (Max 4Ω)@VGS=10V.
  • Gate Charge (Typical 14nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-220F TO-251N 1 2 3 1 2 3 1. Gate 2. Drain 3. Source General.

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Datasheet Details

Part number SW4N80B
Manufacturer Samwin
File Size 488.53 KB
Description N-channel TO-220F MOSFET
Datasheet download datasheet SW4N80B Datasheet

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Full PDF Text Transcription

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SAMWIN SW4N80B N-channel TO-220F MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 4Ω)@VGS=10V ■ Gate Charge (Typical 14nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-251N 1 2 3 1 2 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
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