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SW4N60A - N-Channel MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • High ruggedness.
  • RDS(ON) (Max 2.2 Ω)@VGS=10V.
  • Gate Charge (Typ 25nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-220F TO-220 3 1 1. Gate 2. Drain 3. Source General.

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Datasheet Details

Part number SW4N60A
Manufacturer Samwin
File Size 887.22 KB
Description N-Channel MOSFET
Datasheet download datasheet SW4N60A Datasheet

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Full PDF Text Transcription

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www.DataSheet.co.kr SAMWIN SW4N60A N-channel MOSFET BVDSS : 600V ID : 4.0A RDS(ON) : 2.2ohm 1 2 1 3 2 2 Features ■ High ruggedness ■ RDS(ON) (Max 2.2 Ω)@VGS=10V ■ Gate Charge (Typ 25nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 3 1 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
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