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SW4N60K - N-Channel MOSFET

Description

This power MOSFET is produced with advanced super junction technology of SAMWIN.

characteristics.

Features

  • High ruggedness.
  • Low RDS(ON) (Typ 1Ω)@VGS=10V.
  • Low Gate Charge (Typ 13nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.

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Datasheet Details

Part number SW4N60K
Manufacturer SEMIPOWER
File Size 958.39 KB
Description N-Channel MOSFET
Datasheet download datasheet SW4N60K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SW4N60K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features  High ruggedness  Low RDS(ON) (Typ 1Ω)@VGS=10V  Low Gate Charge (Typ 13nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:Adapter,LED, Charger TO-220F TO-251 TO-252 1 2 3 12 3 1 2 3 1. Gate 2. Drain 3. Source BVDSS : 600V ID : 4A RDS(ON) : 1Ω 2 1 General Description 3 This power MOSFET is produced with advanced super junction technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
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