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K9GBG08U0A - 32Gb A-die NAND Flash

General Description

for VccQ and VssQ are added.

5.

Voltage on any pin relative to VSS for VccQ=1.8V is added in table 2.1.

Key Features

  • 5 1.3 General.

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Full PDF Text Transcription for K9GBG08U0A (Reference)

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www.DataSheet4U.net Rev.1.0, May. 2010 K9GBG08U0A K9LCG08U1A K9HDG08U5A 32Gb A-die NAND Flash Multi-Level-Cell (2bit/cell) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGH...

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Level-Cell (2bit/cell) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or otherwise.

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