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K7R320884M - 1M x 36 & 2M x 18 QDR II b4 SRAM

Download the K7R320884M datasheet PDF. This datasheet also covers the K7R321884M variant, as both devices belong to the same 1m x 36 & 2m x 18 qdr ii b4 sram family and are provided as variant models within a single manufacturer datasheet.

General Description

0.3 1.

Update current characteristics in DC electrical characteristics 2.

Change AC timing characteristics 3.

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Note: The manufacturer provides a single datasheet file (K7R321884M_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K7R320884M (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K7R320884M. For precise diagrams, and layout, please refer to the original PDF.

K7R323684M K7R321884M K7R320884M Preliminary 1Mx36 & 2Mx18 & 4Mx8 QDRTM II b4 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx8-bit QDRTM II b4 SRAM Revision History Rev. No...

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x36-bit, 2Mx18-bit, 4Mx8-bit QDRTM II b4 SRAM Revision History Rev. No. History 0.0 1. Initial document. 0.1 1. Package dimension modify. P.20 from 13mmx15mm to 15mmx17mm 0.2 1. Pin name change from DLL to Doff. 2. Vddq range change from 1.5V to 1.5V~1.8V. 3. Update JTAG test conditions. 4. Reserved pin for high density name change from NC to Vss/SA 5. Delete AC test condition about Clock Input timing Reference Level 6. Delete clock description on page 2 and add HSTL I/O comment 0.3 1. Update current characteristics in DC electrical characteristics 2. Change AC timing characteristics 3. Update JTAG instruction coding and d

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