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K6F4016U4G-F - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Download the K6F4016U4G-F datasheet PDF. This datasheet also covers the K6F4016U4G variant, as both devices belong to the same 256k x16 bit super low power and low voltage full cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The K6F4016U4G families are fabricated by SAMSUNG′s advanced full CMOS p

Key Features

  • Process Technology: Full CMOS.
  • Organization: 256K x16 bit.
  • Power Supply Voltage: 2.7~3.3V.
  • Low Data Retention Voltage: 1.5V(Min).
  • Three State Outputs.
  • Package Type: 48-TBGA-6.00x7.00.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K6F4016U4G_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K6F4016U4G-F (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K6F4016U4G-F. For precise diagrams, and layout, please refer to the original PDF.

K6F4016U4G Family Preliminary CMwwOwS.DaStaSRheAet4MU.com Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. Hi...

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and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Date October 15, 2003 Remark Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. - 1 - Revision 0.0 October 2003 K6F4016U4G Family Preliminary CMwwOwS.DaStaSRheAet4MU.com 256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM FEATURES • Process Technology: Full CMOS • Org

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