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K6F4016R4E-F - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Download the K6F4016R4E-F datasheet PDF. This datasheet also covers the K6F4016R4E variant, as both devices belong to the same 256k x16 bit super low power and low voltage full cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The K6F4016R4E families are fabricated by SAMSUNG′s advan

Key Features

  • Process Technology: Full CMOS.
  • Organization: 256K x16 bit.
  • Power Supply Voltage: 1.65~2.20V.
  • Low Data Retention Voltage: 1.0V(Min).
  • Three State Outputs.
  • Package Type: 48-TBGA-6.00x7.00.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K6F4016R4E_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K6F4016R4E-F (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K6F4016R4E-F. For precise diagrams, and layout, please refer to the original PDF.

K6F4016R4E Family CMwwOw.SDatSaSRheAet4MU.com Document Title 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 I...

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ltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft 1.0 Finalize Draft Date Remark November 10, 2000 Preliminary March 12, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. - 1 - Revision 1.0 March 2001 K6F4016R4E Family CMwwOw.SDatSaSRheAet4MU.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
SAMSUNG Electronics K6F4016R4G 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM SAMSUNG Electronics

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