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K6F4008U2E - 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM

General Description

The K6F4008U2E families are fabricated by SAMSUNG′s advanced full CMOS process technology.

Key Features

  • Process Technology: Full CMOS.
  • Organization: 512K x8 bit.
  • Power Supply Voltage: 2.7~3.3V.
  • Low Data Retention Voltage: 1.5V(Min).
  • Three State Outputs.
  • Package Type: 48(36)-TBGA-6.00x7.00.

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Full PDF Text Transcription for K6F4008U2E (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K6F4008U2E. For precise diagrams, and layout, please refer to the original PDF.

K6F4008U2E Family CMOS SRAM Document Title 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft 1.0 Fi...

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tic RAM Revision History Revision No. History 0.0 Initial Draft 1.0 Finalize Draft Date Remark October 25, 2000 Preliminary March 12, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. - 1 - Revision 1.0 March 2001 K6F4008U2E Family CMOS SRAM 512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM FEATURES • Process Technology: Full CMOS • Organization: 512K x8 bit • Powe

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