K4S56323PF-FG - 2M x 32Bit x 4 Banks Mobile SDRAM

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S56323PF-FG
Manufacturer	Samsung semiconductor
File Size	171.91 KB
Description	2M x 32Bit x 4 Banks Mobile SDRAM
Datasheet	K4S56323PF-FG Datasheet
Additional preview pages of the K4S56323PF-FG datasheet.

Product details

Description

The K4S56323PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

1.8V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR (Parti.

📁 Similar Datasheet

K4S560432E-UC75 - SDRAM 256Mb E-die (Samsung)
K4S560832E-UC75 - SDRAM 256Mb E-die (Samsung)
K4S561632C - 256Mbit SDRAM (Samsung)
K4S561632E-UC60 - SDRAM 256Mb E-die (Samsung)
K4S561632E-UC75 - SDRAM 256Mb E-die (Samsung)
K4S561632H - 256Mb H-Die SDRAM (Samsung Electronics)
K4S510432D - 512Mb D-die SDRAM (Samsung)
K4S510832D - 512Mb D-die SDRAM (Samsung)

Other Datasheets by Samsung semiconductor

K4S56323PF-FF - 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323PF-FHF - 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323PF-FHG - 2M x 32Bit x 4 Banks Mobile SDRAM
K4S563233F - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S563233FHN - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S563233FHN75 - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Published: Apr 4, 2010 |