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K4S56323LF-FHE - 2M x 32Bit x 4 Banks Mobile SDRAM

Download the K4S56323LF-FHE datasheet PDF. This datasheet also covers the K4S56323LF-FE variant, as both devices belong to the same 2m x 32bit x 4 banks mobile sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

The K4S56323LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Key Features

  • VDD/VDDQ = 2.5V/2.5V.
  • LVCMOS compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
  • EMRS cycle with address key programs.
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • Special Function Support. -. PASR (Par.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4S56323LF-FE_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K4S56323LF-FHE (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K4S56323LF-FHE. For precise diagrams, and layout, please refer to the original PDF.

K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS compatible with multiplexed address. • Four banks operat...

View more extracted text
2.5V • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking. • Auto refresh. • • • • 64ms refresh period (4K cycle). Commercial Temperature Operation (-25°C ~ 70°C). Extend

More Datasheets from Samsung Semiconductor

Part Number Description
K4S56323LF-FHC 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323LF-FHL 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323LF-FHN 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323LF-FHR 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323LF-FHS 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323LF-FC 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323LF-FE 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323LF-FL 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323LF-FN 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323LF-FR 2M x 32Bit x 4 Banks Mobile SDRAM