K4S563233FHN75 - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S563233FHN75
Manufacturer	Samsung semiconductor
File Size	140.87 KB
Description	2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
Datasheet	K4S563233FHN75 Datasheet
Additional preview pages of the K4S563233FHN75 datasheet.

Product details

Description

The K4S563233F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

3.0V & 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR.

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Other Datasheets by Samsung semiconductor

K4S563233FHN - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S563233F - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
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K4S56323LF-FE - 2M x 32Bit x 4 Banks Mobile SDRAM
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Published: Apr 7, 2005 |