Datasheet4U Logo Datasheet4U.com

K4H561638F-TCCC - 256Mb F-die DDR400 SDRAM Specification

Download the K4H561638F-TCCC datasheet PDF. This datasheet also covers the K4H560838F-TC variant, as both devices belong to the same 256mb f-die ddr400 sdram specification family and are provided as variant models within a single manufacturer datasheet.

General Description

DDR SDRAM 16Mb x 16 32Mb x 8 VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 NC VDDQ LDQS NC VDD NC LDM WE CAS RAS CS NC BA0 BA1 AP/A10 A0 A1 A2 A3 VDD VDD DQ0 VDDQ NC DQ1 VSSQ NC DQ2 VDDQ NC DQ3 VSSQ NC NC VDDQ NC NC VDD NC NC WE CAS RAS CS NC BA0 BA1 AP/A10 A0 A1 A2 A3 VDD 1 2 3 4 5 6 7

Key Features

  • 200MHz Clock, 400Mbps data rate.
  • VDD= +2.6V + 0.10V, VDDQ= +2.6V + 0.10V.
  • Double-data-rate architecture; two data transfers per clock cycle.
  • Bidirectional data strobe(DQS).
  • Four banks operation.
  • Differential clock inputs(CK and CK).
  • DLL aligns DQ and DQS transition with CK transition.
  • MRS cycle with address key programs -. Read latency 3 (clock) for DDR400 , 2.5 (clock) for DDR333 -. Burst length (2, 4, 8) -. Burst type (s.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4H560838F-TC_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K4H561638F-TCCC (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K4H561638F-TCCC. For precise diagrams, and layout, please refer to the original PDF.

DDR SDRAM 256Mb F-die (x8, x16) DDR SDRAM 256Mb F-die DDR400 SDRAM Specification Revision 1.1 Rev. 1.1 August. 2003 DDR SDRAM 256Mb F-die (x8, x16) 256Mb F-die Revision H...

View more extracted text
.1 August. 2003 DDR SDRAM 256Mb F-die (x8, x16) 256Mb F-die Revision History Revison 1.0 (June. 2003) 1. First release Revison 1.1 (August. 2003) 1. Added x8 org (K4H560838F) DDR SDRAM Rev. 1.1 August. 2003 DDR SDRAM 256Mb F-die (x8, x16) Key Features • 200MHz Clock, 400Mbps data rate. • VDD= +2.6V + 0.10V, VDDQ= +2.6V + 0.10V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 3 (clock) for DDR400 , 2.5 (cl

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Samsung Logo K4H561638A-TCA0 128Mb DDR SDRAM Samsung
Samsung Logo K4H561638A-TCA2 128Mb DDR SDRAM Samsung
Samsung Logo K4H561638A-TCB0 128Mb DDR SDRAM Samsung
Samsung Logo K4H561638A-TLA0 128Mb DDR SDRAM Samsung
Samsung Logo K4H561638A-TLA2 128Mb DDR SDRAM Samsung

More Datasheets from Samsung Semiconductor

Part Number Description
K4H561638F-TCC4 256Mb F-die DDR400 SDRAM Specification
K4H561638F-UCC4 256Mb F-die DDR400 SDRAM
K4H561638F-UCCC 256Mb F-die DDR400 SDRAM
K4H561638F 256Mb F-die DDR SDRAM Specification
K4H561638D-TCB3 256Mb D-die DDR Sdram
K4H561638H (K4H560438H - K4H561638H) 256Mb H-die DDR SDRAM Specification
K4H561638J 256Mb J-die DDR SDRAM Specification
K4H560438D-TCB3 256Mb D-die DDR Sdram
K4H560438H (K4H560438H - K4H561638H) 256Mb H-die DDR SDRAM Specification
K4H560438J 256Mb J-die DDR SDRAM Specification