Datasheet4U Logo Datasheet4U.com

K4H561638D-TCB3 - 256Mb D-die DDR Sdram

Download the K4H561638D-TCB3 datasheet PDF. This datasheet also covers the K4H560838D-TCB3 variant, as both devices belong to the same 256mb d-die ddr sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

Clock : CK and CK are differential clock inputs.

All address and control input signals are sampled on the positive edge of CK and negative edge of CK.

Output (read) data is referenced to both edges of CK.

Key Features

  • Double-data-rate architecture; two data transfers per clock cycle.
  • Bidirectional data strobe(DQS).
  • Four banks operation.
  • Differential clock inputs(CK and CK).
  • DLL aligns DQ and DQS transition with CK transition.
  • MRS cycle with address key programs -. Read latency 2, 2.5 (clock) www. DataSheet4U. com -. Burst length (2, 4, 8) -. Burst type (sequential & interleave).
  • All inputs except data & DM are sampled at the positive going edge of.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4H560838D-TCB3_SamsungSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K4H561638D-TCB3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K4H561638D-TCB3. For precise diagrams, and layout, please refer to the original PDF.

256Mb Key Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs...

View more extracted text
al data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (clock) www.DataSheet4U.com -. Burst length (2, 4, 8) -. Burst type (sequential & interleave) • All inputs except data & DM are sampled at the positive going edge of the system clock(CK) • Data I/O transactions on both edges of data strobe • Edge aligned data output, center aligned data input • LDM,UDM/DM for write masking only • Auto & Self refresh • 7.8us refresh interval(8K/64ms refresh) • Maximum burst refresh cycle : 8 • 66p

More Datasheets from Samsung Semiconductor

Part Number Description
K4H561638F 256Mb F-die DDR SDRAM Specification
K4H561638F-TCC4 256Mb F-die DDR400 SDRAM Specification
K4H561638F-TCCC 256Mb F-die DDR400 SDRAM Specification
K4H561638F-UCC4 256Mb F-die DDR400 SDRAM
K4H561638F-UCCC 256Mb F-die DDR400 SDRAM
K4H561638H (K4H560438H - K4H561638H) 256Mb H-die DDR SDRAM Specification
K4H561638J 256Mb J-die DDR SDRAM Specification
K4H560438D-TCB3 256Mb D-die DDR Sdram
K4H560438H (K4H560438H - K4H561638H) 256Mb H-die DDR SDRAM Specification
K4H560438J 256Mb J-die DDR SDRAM Specification