Datasheet Details
| Part number | K9LAG08U1M |
|---|---|
| Manufacturer | Samsung Electronics |
| File Size | 1.01 MB |
| Description | (K9XXG08UXM) Flash Memory |
| Datasheet |
 K9LAG08U1M Datasheet
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General Description
Offered in 1Gx8bit, the K9G8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit.
Its NAND cell provides the most costeffective solution for the solid state mass storage market.
Key Features
- Voltage Supply : 2.7 V ~ 3.6 V.
- Organization - Memory Cell Array : (1G + 32M)bit x 8bit - Data Register : (2K + 64)bit x8bit.
- Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte.
- Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 60µs(Max. ) - Serial Access : 30ns(Min. ).
- Memory Cell : 2bit / Memory Cell.
- Fast Write Cycle Time - Program time : 800µs(Typ. ) - Block Erase Time : 1.5ms(Typ. ).
