Datasheet Details
| Part number | K9LBG08U0M |
|---|---|
| Manufacturer | Samsung Electronics |
| File Size | 1.49 MB |
| Description | FLASH MEMORY |
| Datasheet |
 K9LBG08U0M Datasheet
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General Description
Offered in 4Gx8bit, the K9LBG08U0M is a 32G-bit NAND Flash Memory with spare 1G-bit.
Its NAND cell provides the most costeffective solution for the solid state mass storage market.
Key Features
- Voltage Supply : 2.7 V ~ 3.6 V.
- Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit.
- Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (512K + 16K)Byte.
- Page Read Operation - Page Size : (4K + 128)Byte - Random Read : 60µs(Max. ) - Serial Access : 25ns(Min. ).
- K9MDG08U5M: 50ns(Min. ).
- Memory Cell : 2bit / Memory Cell.
- Fast Write Cycle Time - Program time : 800µs(Typ. ) - Block Er.
