Click to expand full text
STS8235
S a mHop Microelectronics C orp.
Ver 1.0
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
30V
F E AT UR E S S uper high dense cell design for low R DS (ON ).
ID
4.5A
R DS(ON) (m Ω) Max
36 @ VGS=4.5V 46 @ VGS=2.5V
R ugged and reliable. S urface Mount P ackage. E S D P rotected.
S OT26 Top View
D1
D2
S1 D1/D2 S2
1 2 3
6 5 4
G1 D1/D2 G2
G1
G2
S1
S2
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a
Limit 30 ±10 TA=25°C TA=70°C TA=25°C TA=70°C 4.5 3.6 18
a
Units V V A A A A W °C
Maximum Power Dissipation
1.25 0.
STS8235 Datasheet
