Datasheet4U Logo Datasheet4U.com

STS8207 - Dual N-Channel MOSFET

Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. TSOT 26 Top View D1 D2 S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2.

📥 Download Datasheet

Datasheet Details

Part number STS8207
Manufacturer SamHop Microelectronics
File Size 101.49 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet STS8207 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STS8212 Dual N-Channel Enhancement Mode Field Effect Transistor SamHop
STS8213 Dual N-Channel Enhancement Mode Field Effect Transistor SamHop
STS8217 Dual N-Channel Enhancement Mode Field Effect Transistor SamHop
STS8235 Dual N-Channel Enhancement Mode Field Effect Transistor SamHop
STS8050 NPN Silicon Transistor AUK

Other Datasheets by SamHop Microelectronics

Part Number Description
STS8201 Dual N-Channel E nhancement Mode Field Effect Transistor
STS8202 Dual N-Channel MOSFET
STS8205 Dual N-Channel E nhancement Mode Field Effect Transistor
STS8208 Dual N-Channel E nhancement Mode Field Effect Transistor
STS8215 Dual N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
Gre r Pro STS8207 Ver 1.0 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 34 20V 4.5A 36 40 49 @ VGS=4.0V @ VGS=3.7V @ VGS=3.1V @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. TSOT 26 Top View D1 D2 S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 4.5 3.6 18 a Units V V A A A W W °C Maximum Power Dissipation 1.25 0.
Published: |