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SPP4435W - P-Channel MOSFET

Description

The SPP4435W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • -30V/-9.2A,RDS(ON)=24mΩ@VGS=-10V.
  • -30V/-7.0A,RDS(ON)=30mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOP.
  • 8 package design PIN.

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Datasheet preview – SPP4435W

Datasheet Details

Part number SPP4435W
Manufacturer SYNC POWER
File Size 470.20 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP4435W Datasheet
Additional preview pages of the SPP4435W datasheet.

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Full PDF Text Transcription

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SPP4435W P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP4435W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  -30V/-9.2A,RDS(ON)=24mΩ@VGS=-10V  -30V/-7.0A,RDS(ON)=30mΩ@VGS=-4.
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