Datasheet4U Logo Datasheet4U.com

SPP4931W - P-Channel MOSFET

Description

The SPP4931W is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • ‹ -20V/-8.5A,RDS(ON)= 20mΩ@VGS=-4.5V ‹ -20V/-8.0 A,RDS(ON)= 25mΩ@VGS=-2.5V ‹ -20V/-5.0 A,RDS(ON)= 35mΩ@VGS=-1.8V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ SOP-8P package design.

📥 Download Datasheet

Datasheet preview – SPP4931W

Datasheet Details

Part number SPP4931W
Manufacturer SYNC POWER
File Size 202.98 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP4931W Datasheet
Additional preview pages of the SPP4931W datasheet.

📁 Similar Datasheet

  • SPP42N03S2L-13 - OptiMOS Power-Transistor (Infineon Technologies AG)
  • SPP46N03 - SIPMOS Power Transistor (Infineon Technologies)
  • SPP46N03L - SIPMOS Power Transistor (Infineon Technologies)
  • SPP47N10 - SIPMOS Power-Transistor (Infineon Technologies AG)
  • SPP47N10L - SIPMOS Power-Transistor (Infineon Technologies AG)
  • SPP-250-LLPL - Coaxial Cables (TMC)
  • SPP-375-LLPL - Coaxial Cables (TMC)
  • SPP-500-LLPL - Coaxial Cables (TMC)
  • SPP-ID975 - (SPP-ID975 / SPP-ID976) Service Manual (Sony)
  • SPP-ID975 - Cordless Telephone (Sony)
Other Datasheets by SYNC POWER

Full PDF Text Transcription

Click to expand full text
SPP4931W P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP4931W is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES ‹ -20V/-8.5A,RDS(ON)= 20mΩ@VGS=-4.5V ‹ -20V/-8.0 A,RDS(ON)= 25mΩ@VGS=-2.5V ‹ -20V/-5.0 A,RDS(ON)= 35mΩ@VGS=-1.
Published: |