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SPP4435B - P-Channel MOSFET

Description

The SPP4435B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • ‹ -30V/-9.2A,RDS(ON)= 24mΩ@VGS=- 10V ‹ -30V/-7.0A,RDS(ON)= 30mΩ@VGS=-4.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ SOP.
  • 8P package design PIN.

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Datasheet preview – SPP4435B

Datasheet Details

Part number SPP4435B
Manufacturer SYNC POWER
File Size 201.34 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP4435B Datasheet
Additional preview pages of the SPP4435B datasheet.

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Full PDF Text Transcription

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SPP4435B P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP4435B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter FEATURES ‹ -30V/-9.2A,RDS(ON)= 24mΩ@VGS=- 10V ‹ -30V/-7.0A,RDS(ON)= 30mΩ@VGS=-4.
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