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SPP3095 - P-Channel MOSFET

Description

The SPP3095 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • -30V/-8A,RDS(ON)=100mΩ@VGS=-10V.
  • -30V/-6A,RDS(ON)=150mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-252-2L package design PIN.

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Datasheet Details

Part number SPP3095
Manufacturer SYNC POWER
File Size 346.50 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP3095 Datasheet
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SPP3095 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3095 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as DC/DC converter and Desktop computer power management. The package is universally preferred for commercial industrial surface mount applications APPLICATIONS  Power Management in Desktop Computer  DC/DC Converter  LCD Display inverter FEATURES  -30V/-8A,RDS(ON)=100mΩ@VGS=-10V  -30V/-6A,RDS(ON)=150mΩ@VGS=-4.
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