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SPP3403 - P-Channel MOSFET

Description

The SPP3403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • -30V/-2.8A,RDS(ON)=100mΩ@VGS=- 10V.
  • -30V/-2.5A,RDS(ON)=110mΩ@VGS=-4.5V.
  • -30V/-1.5A,RDS(ON)=145mΩ@VGS=-2.5V.
  • -30V/-1.0A,RDS(ON)=200mΩ@VGS=-1.8V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23 package design PIN.

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Datasheet preview – SPP3403

Datasheet Details

Part number SPP3403
Manufacturer SYNC POWER
File Size 343.69 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP3403 Datasheet
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SPP3403 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  -30V/-2.8A,RDS(ON)=100mΩ@VGS=- 10V  -30V/-2.5A,RDS(ON)=110mΩ@VGS=-4.
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