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SPP2331 - P-Channel MOSFET

Description

The SPP2331 is the P-Channel logic enhancement mode power field effect transistors are produced using super high cell density , DMOS trench technology.

Features

  • -100V/-3.0A,RDS(ON)=200mΩ@VGS=-10V.
  • -100V/-1.0A,RDS(ON)=220mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23-3L package design PIN.

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Datasheet preview – SPP2331

Datasheet Details

Part number SPP2331
Manufacturer SYNC POWER
File Size 489.20 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP2331 Datasheet
Additional preview pages of the SPP2331 datasheet.

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Full PDF Text Transcription

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SPP2331 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2331 is the P-Channel logic enhancement mode power field effect transistors are produced using super high cell density , DMOS trench technology. The SPP2331 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  Powered System  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  Power Tool  Motor Control FEATURES  -100V/-3.0A,RDS(ON)=200mΩ@VGS=-10V  -100V/-1.0A,RDS(ON)=220mΩ@VGS=-4.
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