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SPP2309 - P-Channel MOSFET

Description

The SPP2309 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • P-Channel -20V/2.5A,RDS(ON)=0.35Ω@VGS=-4.5V -20V/1.5A,RDS(ON)=0.48Ω@VGS=-2.5V -20V/0.7A,RDS(ON)=0.75Ω@VGS=-1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23 package design PIN.

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Datasheet Details

Part number SPP2309
Manufacturer SYNC POWER
File Size 344.04 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP2309 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPP2309 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2309 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  P-Channel -20V/2.5A,RDS(ON)=0.35Ω@VGS=-4.5V -20V/1.5A,RDS(ON)=0.48Ω@VGS=-2.5V -20V/0.7A,RDS(ON)=0.
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