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SPN28N65 - N-Channel Super-Junction Power MOSFET

General Description

The SPN28N65 is the N-Channel enhancement mode power field effect transistor which is fabricated using an advanced high voltage super junction MOSFET process which delivers high levels of performance and robustness in popular AC-DC applications.

Key Features

  • 650V/16A, RDS(ON)=280mΩ@VGS=10V.
  • High density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • Low Crss & gate charge.
  • Fast switching.
  • TO-252/TO-220/TO-220F/TO263-2 package design PIN.

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Datasheet Details

Part number SPN28N65
Manufacturer SYNC POWER
File Size 904.58 KB
Description N-Channel Super-Junction Power MOSFET
Datasheet download datasheet SPN28N65 Datasheet

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SPN28N65 N-Channel Super-Junction Power MOSFET DESCRIPTION The SPN28N65 is the N-Channel enhancement mode power field effect transistor which is fabricated using an advanced high voltage super junction MOSFET process which delivers high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.