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SPN200N04 - N-Channel Enhancement Mode MOSFET

Description

The SPN200N04 is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

  • PIN.

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Datasheet Details

Part number SPN200N04
Manufacturer SYNC POWER
File Size 421.74 KB
Description N-Channel Enhancement Mode MOSFET
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SPN200N04 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN200N04 is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN200N04 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  High Frequency Synchronous Buck Converter  DC/DC Power System  Load Switch FEATURES PIN CONFIGURATION  40V/200A,RDS(ON)=1.6mΩ@VGS=10V for PPAK5x6-8L  40V/200A,RDS(ON)=2.
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