Datasheet4U Logo Datasheet4U.com

SPN125T10 - N-Channel MOSFET

Description

The SPN125T10 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 100V/112A, RDS(ON)=4.2mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-220-3L/TO-220F-3L/PPAK5x6-8L/TO-262-3L/ TO-263-2L package design PIN.

📥 Download Datasheet

Datasheet preview – SPN125T10

Datasheet Details

Part number SPN125T10
Manufacturer SYNC POWER
File Size 476.76 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN125T10 Datasheet
Additional preview pages of the SPN125T10 datasheet.

📁 Similar Datasheet

Other Datasheets by SYNC POWER

Full PDF Text Transcription

Click to expand full text
SPN125T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN125T10 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  DC/DC Converter  Load Switch  SMPS Secondary Side Synchronous Rectifier  Motor Control  Power Tool FEATURES  100V/112A, RDS(ON)=4.
Published: |